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Know More About MOSFET Driver

issuu.com/weedplane23/docs/troducing_mosfet_driver_te...
While you're reading about a "MOSFET", all you hav...
Uploaded by weedplane23 on 03/12/2013
Digital publication details: 2 pages.

Microchip Expands Mosfet Driver Family

issuu.com/tuna49onion/docs/jvc_car_stereo_review.2013...
While you're reading about a "MOSFET", all you hav...
Uploaded by tuna49onion on 01/19/2013
Digital publication details: 3 pages.

TCAD Based Analysis of Gate Leakage Current forHigh-k Gate Stack MOSFET

issuu.com/ideseditor/docs/aceee_ijcom_2_1_105...
Scaling of metal-oxide-semiconductor transistors to smaller dimensions has been a key driving force in the IC industry. This work analysis the gate leakage current behavior of nano scale MOSFET based on TCAD simulation. The Sentaurus Simulator simulates the high-k gate stack structure of N-MOSFET for analysis purpose. The impact of interfacial oxide thickness on the gate tunneling current has been investigated as a function of gate voltages for a given equivalent oxide thickness (EOT) of 1.0 nm. It was reported in the results that interfacial oxide thickness plays an important role in reducing the gate leakage current. It is also observed that highk stack gated MOSFET exhibits improved performance in term of Off current and DIBL
Uploaded by ideseditor on 01/14/2013
Digital publication details: 4 pages.

The Study of MOSFET Parallelism in High FrequencyDC/DC Converter

issuu.com/ideseditor/docs/aceee_ijepe_3_2_83...
The study of MOSFET parallelism and the impact on body diode conduction loss of the switch are presented in this paper. The simulation is carried out for synchronous rectifier buck converter (SRBC) in continuous conduction mode where several configurations of the MOSFET connected in parallel are applied. It is found that the body diode conduction loss has been reduced of more than 35 % in fourparallel S1 with one S2 compared to the single pair totempoled switched SRBC circuit.
Uploaded by ideseditor on 01/08/2013
Digital publication details: 4 pages.

Tube (6 N8P) + MOSFET mixed high quality audio power amplifier

issuu.com/hedong84111/docs/tube__6n8p_6sn7____mosfet_...
This is a simple mixing tube (6 N8P / 6 SN7) + MOSFET design. The sound is great though circuit is very simple. 6 N8P troid form SRPP circuit drive MOSFET level the followers of the voltage. Only 0.08% of the total harmonic distortion @ 1 KHz 1 W 8 ohms load. This is a tool, provide the tubes in the solid voice price.
Uploaded by hedong84111 on 01/03/2012
Digital publication details: 5 pages.

V1 MOSFET Class-A Headphone Amplifier

issuu.com/hedong84111/docs/sense_v1_headphone_amplifi...
V1 MOSFET Class-A Headphone Amplifier
Uploaded by hedong84111 on 03/04/2012
Digital publication details: 4 pages.

ESD Protection And The IGBT, MOSFET, SCR

issuu.com/glue92year/docs/cing_power_delivery_system_...
When you read about a "MOSFET", what you need to r...
Uploaded by glue92year on 01/12/2013
Digital publication details: 3 pages.

2SK134/2SJ49 MOSFET for Audio application

issuu.com/siliconray11/docs/2sk134_2sj49_mosfet_for_a...
2SK134/2SJ49 MOSFET for Audio application
Uploaded by siliconray11 on 02/26/2012
Digital publication details: 3 pages.

Sense V1 MOSFET Class-A Headphone Amplifier

issuu.com/jane329/docs/sense_v1_headphone_amplifier__...
Sense V1 is a pure class-A VMOSFET headphone amplifier. VMOSFET has high working frequency, low noise, good thermal stablility. The harmonics of VMOSFET are even order, so much like vacuum tubes. That's why the sound of VMOSFET is like tube amplifiers. Design of V1 has no global feedback to features more natural sound. It use hifi components such as Alps potentiometer, WIMA caps which are usually used on expensive high-end amplifiers.
Uploaded by jane329 on 02/05/2012
Digital publication details: 4 pages.

Power Transistor Modules

issuu.com/icshoppers2/docs/power_transistor_modules...
http://www.icshoppers.com/ICShoppers/index.html Power Transistor Modules,IGBT, IGBTs, Insulated gate bipolar transistor ICShoppers.com is focuing on helping customers buying obsolete, hard to find, long lead time electronic parts such as power transistor modules, diodes, Power Bipolar Transistors, Bipolar RF Transistors, Darlington Transistors, Metal-oxide Semiconductor FET (MOSFET), Power MOSFET,RF MOSFET Transistors, RF Transistors, Insulated Gate Bipolar Transistors (IGBT), Small-signal Bipolar Transistors (BJT). We also offer datasheet, technical consultation and other services. Click here http://www.icshoppers.com/ICShoppers/index.html to learn more about IGBT.
Uploaded by icshoppers2 on 02/19/2012
Digital publication details: 6 pages.
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